製品の技術仕様
| Product Attribute | Attribute Value |
|---|---|
| Class | - |
| Manufacturer | Cree, Inc. |
| Product Category | RF JFET Transistors |
| RoHS |
|
| Product | GaN HEMT |
| Forward Transconductance - Min | - |
| Rds On - Drain-Source Resistance | - |
| Rise Time | - |
| Maximum Drain Gate Voltage | - |
| Fall Time | - |
| p1db - Compression Point | - |
| Operating Frequency | 1 GHz to 2.5 GHz |
| Operating Temperature Range | - |
| Mounting Style | Screw Mount |
| Pd - Power Dissipation | - |
| Output Power | 120 W |
| Product Type | RF JFET Transistors |
| Package / Case | 440193 |
| Length | 20.45 mm |
| Width | 5.97 mm |
| Height | 4.19 mm |
| Minimum Operating Temperature | - 40 C |
| Maximum Operating Temperature | + 150 C |
| Application | - |
| NF - Noise Figure | - |
| Gain | 19 dB |
| Packaging | Tube |
| Brand | Wolfspeed / Cree |
| Configuration | Single |
| Development Kit | CGH40120F-TB |
| Gate-Source Cutoff Voltage | - |
| Transistor Polarity | N-Channel |
| Transistor Type | HEMT |
| Vgs - Gate-Source Breakdown Voltage | - 10 V to 2 V |
| Vgs Th - Gate-Source Threshold Voltage | - 3 V |
| Technology | GaN |
| Id - Continuous Drain Current | 12 A |
| Vds - Drain-Source Breakdown Voltage | 120 V |
| Typical Turn-Off Delay Time | - |
| Factory Pack Quantity | 100 |
| Subcategory | Transistors |
