製品の技術仕様
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | Vishay |
| Product Category | MOSFET |
| RoHS |
|
| Forward Transconductance - Min | 0.57 S |
| Rds On - Drain-Source Resistance | 540 mOhms |
| Rise Time | 47 ns |
| Fall Time | 18 ns |
| Mounting Style | SMD/SMT |
| Pd - Power Dissipation | 3.1 W |
| Product Type | MOSFET |
| Number Of Channels | 1 Channel |
| Package / Case | SOT-223-3 |
| Length | 6.5 mm |
| Width | 3.5 mm |
| Height | 1.8 mm |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Channel Mode | Enhancement |
| Packaging | Cut Tape or Reel |
| Brand | Vishay / Siliconix |
| Configuration | Single |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Vgs - Gate-Source Voltage | 1 V |
| Vgs Th - Gate-Source Threshold Voltage | 1 V |
| Qg - Gate Charge | 6.1 nC |
| Technology | Si |
| Id - Continuous Drain Current | 1.5 A |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Typical Turn-Off Delay Time | 16 ns |
| Typical Turn-On Delay Time | 9.3 ns |
| Factory Pack Quantity | 2500 |
| Subcategory | MOSFETs |
| Unit Weight | 0.008818 oz |
