製品の技術仕様
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | Toshiba |
| Product Category | Bipolar Transistors - BJT |
| RoHS |
|
| Maximum DC Collector Current | 150 mA |
| Mounting Style | SMD/SMT |
| Pd - Power Dissipation | 150 mW |
| Product Type | BJTs - Bipolar Transistors |
| Package / Case | SC-59-3 |
| Collector- Base Voltage VCBO | 50 V |
| Collector- Emitter Voltage VCEO Max | 50 V |
| Collector-Emitter Saturation Voltage | 0.1 V |
| Emitter- Base Voltage VEBO | 5 V |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 125 C |
| Gain Bandwidth Product FT | 80 MHz |
| Series | 2SA1162 |
| Packaging | Cut Tape or Reel |
| Brand | Toshiba |
| Configuration | Single |
| DC Collector/Base Gain Hfe Min | 70 |
| DC Current Gain HFE Max | 400 |
| Transistor Polarity | PNP |
| Factory Pack Quantity | 3000 |
| Subcategory | Transistors |
| Unit Weight | 0.000282 oz |
