GWA40H120DF2
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GWA40H120DF2 , STMicroelectronics

メーカー: STMicroelectronics
製造元部品番号: STGWA40H120DF2
パッケージ: TO-247-3
RoHS:
データシート:

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IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 40 A high speed
見積依頼 In Stock: 542
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製品の技術仕様
Product Attribute Attribute Value
Manufacturer STMicroelectronics
Product Category IGBT Transistors
RoHS
Maximum Gate Emitter Voltage 20 V
Operating Temperature Range - 55 C to + 175 C
Mounting Style Through Hole
Pd - Power Dissipation 468 W
Product Type IGBT Transistors
Package / Case TO-247-3
Collector- Emitter Voltage VCEO Max 1.2 kV
Collector-Emitter Saturation Voltage 2.5 V
Length 20.15 mm
Width 15.75 mm
Height 5.15 mm
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C
Series STGWA40H120DF2
Brand STMicroelectronics
Configuration Single
Continuous Collector Current 40 A
Continuous Collector Current At 25 C 80 A
Continuous Collector Current Ic Max 80 A
Gate-Emitter Leakage Current 250 nA
Technology Si
Factory Pack Quantity 600
Subcategory IGBTs
Unit Weight 1.340411 oz
クロスリファレンス
734458
1156
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