製品の技術仕様
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | Osram Opto Semiconductor |
| Product Category | Phototransistors |
| RoHS |
|
| Type | Silicon NPN Phototransistor |
| Product | Phototransistors |
| Rise Time | 15 us |
| Maximum On-State Collector Current | 50 mA |
| Fall Time | 15 us |
| Mounting Style | Through Hole |
| Pd - Power Dissipation | 220 mW |
| Product Type | Phototransistors |
| Lens Colour/Style | Clear |
| Collector- Emitter Voltage VCEO Max | 50 V |
| Collector-Emitter Breakdown Voltage | 50 V |
| Collector-Emitter Saturation Voltage | 240 mV |
| Wavelength | 880 nm |
| Length | 5.6 mm |
| Width | 5.6 mm |
| Height | 6.2 mm |
| Minimum Operating Temperature | - 40 C |
| Maximum Operating Temperature | + 125 C |
| Qualification | AEC-Q101 |
| Operating Supply Voltage | - |
| Propagation Delay - Max | - |
| Output Current | - |
| Package/Case | TO-18 |
| Part # Aliases | Q62702P0016S004 |
| Brand | OSRAM Opto Semiconductors |
| Light Current | 4 mA |
| Peak Wavelength | 880 nm |
| Dark Current | 20 nA |
| Half Intensity Angle Degrees | 15 deg |
| Factory Pack Quantity | 1000 |
| Subcategory | Optical Detectors and Sensors |
| Unit Weight | 300 mg |
