製品の技術仕様
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | ON Semiconductor |
| Product Category | MOSFET |
| RoHS |
|
| Type | MOSFET |
| Forward Transconductance - Min | 2.75 S |
| Rds On - Drain-Source Resistance | 350 mOhms |
| Rise Time | 100 ns |
| Fall Time | 50 ns |
| Mounting Style | SMD/SMT |
| Pd - Power Dissipation | 2 W |
| Product Type | MOSFET |
| Number Of Channels | 1 Channel |
| Package / Case | SOT-223-4 |
| Length | 6.5 mm |
| Width | 3.5 mm |
| Height | 1.8 mm |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Channel Mode | Enhancement |
| Series | FQT7N10L |
| Packaging | Cut Tape or Reel |
| Part # Aliases | FQT7N10LTF_NL |
| Brand | ON Semiconductor / Fairchild |
| Configuration | Single |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Vgs - Gate-Source Voltage | 20 V |
| Technology | Si |
| Id - Continuous Drain Current | 1.7 A |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Typical Turn-Off Delay Time | 17 ns |
| Typical Turn-On Delay Time | 9 ns |
| Factory Pack Quantity | 4000 |
| Subcategory | MOSFETs |
| Unit Weight | 0.003951 oz |
| Tradename | QFET |
