P2309LT1G
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P2309LT1G , Leshan Radio

メーカー: Leshan Radio
製造元部品番号: LP2309LT1G
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説明:
MOSFET P Trench 60V 1.9A 3V @ 250uA 215 mΩ @ 1.8A,10V SOT-23(TO-236) RoHS
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製品の技術仕様
Product Attribute Attribute Value
Manufacturer Leshan Radio
Continuous Drain Current (Id) @ 25°C 1.9A
Power Dissipation-Max (Ta=25°C) 1.4W
Rds On - Drain-Source Resistance 215mΩ @ 1.8A,10V
Transistor Polarity P Channel
Vgs - Gate-Source Voltage 3V @ 250uA
Vds - Drain-Source Breakdown Voltage 60V
クロスリファレンス
4690804
1148
/category/Semiconductors/Discrete-Semiconductors/Transistors/MOSFET_1148?proid=4690804&N=
$
1 0.02895