製品の技術仕様
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | Infineon |
| Product Category | MOSFET |
| RoHS |
|
| Rds On - Drain-Source Resistance | 20 mOhms, 20 mOhms |
| Rise Time | 3 ns, 3 ns |
| Fall Time | 18 ns, 18 ns |
| Mounting Style | SMD/SMT |
| Pd - Power Dissipation | 60 W |
| Product Type | MOSFET |
| Number Of Channels | 2 Channel |
| Package / Case | TDSON-8 |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 175 C |
| Channel Mode | Enhancement |
| Qualification | AEC-Q101 |
| Series | XPG20N10 |
| Packaging | Cut Tape or Reel |
| Part # Aliases | IPG20N10S4L22AATMA1 SP001091984 |
| Brand | Infineon Technologies |
| Configuration | Dual |
| Transistor Polarity | N-Channel |
| Transistor Type | 2 N-Channel |
| Vgs - Gate-Source Voltage | 16 V |
| Vgs Th - Gate-Source Threshold Voltage | 1.1 V |
| Qg - Gate Charge | 27 nC, 27 nC |
| Technology | Si |
| Id - Continuous Drain Current | 20 A |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Typical Turn-Off Delay Time | 30 ns, 30 ns |
| Typical Turn-On Delay Time | 5 ns, 5 ns |
| Factory Pack Quantity | 5000 |
| Subcategory | MOSFETs |
