PB020N10N5LFATMA1
Payment:
Delivery:

PB020N10N5LFATMA1 , Infineon Technologies

メーカー: Infineon Technologies
製造元部品番号: IPB020N10N5LFATMA1
パッケージ: D2PAK-3
RoHS:
データシート:

PDF For IPB020N10N5LFATMA1

ECAD:
説明:
MOSFET DIFFERENTIATED MOSFETS
Tips: the prices and stock are available, please place order directly.
  • 数量 単価
  • 1+ $6.72921
  • 10+ $5.90346
  • 30+ $5.40000
  • 100+ $4.97709

In Stock: 2

Ship Immediately
数量 最小 1
購入
Total

$6.72921

  • Product Details
  • Shopping Guide
  • FAQs
製品の技術仕様
Product Attribute Attribute Value
Manufacturer Infineon
Product Category MOSFET
RoHS
Forward Transconductance - Min 124 S
Rds On - Drain-Source Resistance 1.7 mOhms
Rise Time 26 ns
Fall Time 29 ns
Mounting Style SMD/SMT
Pd - Power Dissipation 375 W
Product Type MOSFET
Number Of Channels 1 Channel
Package / Case D2PAK-3
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C
Channel Mode Enhancement
Series OptiMOS 5
Packaging Cut Tape or Reel
Part # Aliases IPB020N10N5LF SP001503854
Brand Infineon Technologies
Configuration Single
Transistor Polarity N-Channel
Transistor Type 1 N-Channel
Vgs - Gate-Source Voltage 20 V
Vgs Th - Gate-Source Threshold Voltage 2.2 V
Qg - Gate Charge 210 nC
Technology Si
Id - Continuous Drain Current 120 A
Vds - Drain-Source Breakdown Voltage 100 V
Typical Turn-Off Delay Time 77 ns
Typical Turn-On Delay Time 33 ns
Factory Pack Quantity 1000
Subcategory MOSFETs
Tradename OptiMOS
クロスリファレンス
717892
1148
/category/Semiconductors/Discrete-Semiconductors/Transistors/MOSFET_1148?proid=717892&N=
$
1 6.72921
10 5.90346
30 5.40000
100 4.97709