FF150R12KS4
Payment:
Delivery:

FF150R12KS4 , Infineon Technologies

メーカー: Infineon Technologies
製造元部品番号: FF150R12KS4
パッケージ: 62 mm
RoHS:
データシート:

PDF For FF150R12KS4

ECAD:
説明:
IGBT Modules 1200V 150A DUAL
Tips: the prices and stock are available, please place order directly.
  • 数量 単価
  • 1+ $61.78572

In Stock: 11

Ship Immediately
数量 最小 1
購入
Total

$61.78572

  • Product Details
  • Shopping Guide
  • FAQs
製品の技術仕様
Product Attribute Attribute Value
Manufacturer Infineon
Product Category IGBT Modules
RoHS
Product IGBT Silicon Modules
Maximum Gate Emitter Voltage 20 V
Mounting Style Chassis Mount
Pd - Power Dissipation 1.25 kW
Product Type IGBT Modules
Package / Case 62 mm
Collector- Emitter Voltage VCEO Max 1200 V
Collector-Emitter Saturation Voltage 3.2 V
Length 106.4 mm
Width 61.4 mm
Height 30.5 mm
Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 125 C
Packaging Tray
Part # Aliases FF150R12KS4HOSA1 SP000100706
Brand Infineon Technologies
Configuration Dual
Continuous Collector Current At 25 C 225 A
Gate-Emitter Leakage Current 400 nA
Technology Si
Factory Pack Quantity 10
Subcategory IGBTs
クロスリファレンス
811948
1160
/category/Semiconductors/Discrete-Semiconductors/Transistors/IGBT-Modules_1160?proid=811948&N=
$
1 61.78572