BSP129H6327
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BSP129H6327 , Infineon Technologies

メーカー: Infineon Technologies
製造元部品番号: BSP129H6327
パッケージ: SOT-223
RoHS:
データシート:

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説明:
MOSFET N Trench 240V 350mA 1V @ 108uA 6 Ω @ 350mA,10V SOT-223 RoHS
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  • 1+ $0.56268
  • 10+ $0.47268
  • 30+ $0.42840
  • 100+ $0.38412
  • 500+ $0.29547
  • 1000+ $0.28071

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製品の技術仕様
Product Attribute Attribute Value
Manufacturer Infineon Technologies
Continuous Drain Current (Id) @ 25°C 350mA
Power Dissipation-Max (Ta=25°C) 1.8W
Rds On - Drain-Source Resistance 6Ω @ 350mA,10V
Package / Case SOT-223
Packaging Tape & Reel (TR)
Transistor Polarity N Channel
Vgs - Gate-Source Voltage 1V @ 108uA
Vds - Drain-Source Breakdown Voltage 240V
クロスリファレンス
4593984
1148
/category/Semiconductors/Discrete-Semiconductors/Transistors/MOSFET_1148?proid=4593984&N=
$
1 0.56268
10 0.47268
30 0.42840
100 0.38412
500 0.29547
1000 0.28071