製品の技術仕様
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | IXYS |
| Product Category | MOSFET |
| RoHS |
|
| Rds On - Drain-Source Resistance | 14 mOhms |
| Rise Time | 54 ns |
| Fall Time | 48 ns |
| Mounting Style | Through Hole |
| Pd - Power Dissipation | 230 W |
| Product Type | MOSFET |
| Number Of Channels | 1 Channel |
| Package / Case | TO-220-3 |
| Length | 10.66 mm |
| Width | 4.83 mm |
| Height | 9.15 mm |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 175 C |
| Channel Mode | Enhancement |
| Series | IXTP80N10 |
| Packaging | Tube |
| Brand | IXYS |
| Configuration | Single |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Vgs - Gate-Source Voltage | 20 V |
| Technology | Si |
| Id - Continuous Drain Current | 80 A |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Typical Turn-Off Delay Time | 40 ns |
| Typical Turn-On Delay Time | 31 ns |
| Factory Pack Quantity | 50 |
| Subcategory | MOSFETs |
| Unit Weight | 0.081130 oz |
| Tradename | HiPerFET |
