BN75N170A
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IXBN75N170A , IXYS

メーカー: IXYS
製造元部品番号: IXBN75N170A
パッケージ: SOT-227B-4
RoHS:
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PDF For IXBN75N170A

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IGBT Transistors 75 Amps 1700V 6.00 Rds
見積依頼 In Stock: 10
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製品の技術仕様
Product Attribute Attribute Value
Manufacturer IXYS
Product Category IGBT Transistors
RoHS
Maximum Gate Emitter Voltage 20 V
Operating Temperature Range - 55 C to + 150 C
Mounting Style SMD/SMT
Pd - Power Dissipation 625 W
Product Type IGBT Transistors
Package / Case SOT-227B-4
Collector- Emitter Voltage VCEO Max 1.7 kV
Collector-Emitter Saturation Voltage 4.95 V
Length 38.23 mm
Width 25.42 mm
Height 9.6 mm
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Series IXBN75N170
Packaging Tube
Brand IXYS
Configuration Single
Continuous Collector Current 75 A
Continuous Collector Current At 25 C 75 A
Continuous Collector Current Ic Max 350 A
Gate-Emitter Leakage Current 100 nA
Technology Si
Factory Pack Quantity 10
Subcategory IGBTs
Unit Weight 1.058219 oz
Tradename BIMOSFET
クロスリファレンス
760463
1156
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