製品の技術仕様
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | IXYS |
| Product Category | MOSFET |
| RoHS |
|
| Type | PolarHV HiPerFET N-Channel Power MOSFET |
| Forward Transconductance - Min | 20 S |
| Rds On - Drain-Source Resistance | 270 mOhms |
| Rise Time | 25 ns |
| Fall Time | 21 ns |
| Mounting Style | Through Hole |
| Pd - Power Dissipation | 132 W |
| Product Type | MOSFET |
| Number Of Channels | 2 Channel |
| Package / Case | ISOPLUS-i4-PAK-5 |
| Length | 20.29 mm |
| Width | 5.21 mm |
| Height | 21.34 mm |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Series | FMM22-05PF |
| Packaging | Tube |
| Brand | IXYS |
| Configuration | Dual |
| Transistor Polarity | N-Channel |
| Transistor Type | 2 N-Channel |
| Vgs - Gate-Source Voltage | 30 V |
| Vgs Th - Gate-Source Threshold Voltage | 5 V |
| Qg - Gate Charge | 50 nC |
| Technology | Si |
| Id - Continuous Drain Current | 13 A |
| Vds - Drain-Source Breakdown Voltage | 500 V |
| Typical Turn-Off Delay Time | 72 ns |
| Typical Turn-On Delay Time | 22 ns |
| Factory Pack Quantity | 25 |
| Subcategory | MOSFETs |
| Unit Weight | 0.229281 oz |
| Tradename | PolarHV |
