MMBT5551-7-F
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MMBT5551-7-F , Diodes Incorporated

メーカー: Diodes Incorporated
製造元部品番号: MMBT5551-7-F
パッケージ: SOT-23-3
RoHS:
データシート:

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Bipolar Transistors - BJT SS NPN 300mW
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製品の技術仕様
Product Attribute Attribute Value
Manufacturer Diodes Incorporated
Product Category Bipolar Transistors - BJT
RoHS
Maximum DC Collector Current 0.6 A
Mounting Style SMD/SMT
Pd - Power Dissipation 300 mW
Product Type BJTs - Bipolar Transistors
Package / Case SOT-23-3
Collector- Base Voltage VCBO 180 V
Collector- Emitter Voltage VCEO Max 160 V
Collector-Emitter Saturation Voltage 0.2 V
Emitter- Base Voltage VEBO 6 V
Length 3.05 mm
Width 1.4 mm
Height 1 mm
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Gain Bandwidth Product FT 300 MHz
Series MMBT5551
Packaging Cut Tape or Reel
Brand Diodes Incorporated
Configuration Single
Continuous Collector Current 0.6 A
DC Collector/Base Gain Hfe Min 80
DC Current Gain HFE Max 250
Transistor Polarity NPN
Factory Pack Quantity 3000
Subcategory Transistors
Unit Weight 0.001164 oz
クロスリファレンス
766069
1155
/category/Semiconductors/Discrete-Semiconductors/Transistors/Bipolar-Transistors-BJT_1155?proid=766069&N=
$
1 0.01284
100 0.01201