SiC Device Market Growth and Innovations

The Silicon Carbide (SiC) device market is set for remarkable growth, projected to reach nearly $10 billion by 2029, with an impressive 25% CAGR from 2023 to 2029, according to the Yole Group. This shift is largely driven by SiC’s increasing dominance in the power electronics sector, where its market share is expected to double over the next five years, reaching 26%

Yole Group has collaborated with SERMA Technologies to provide a comprehensive analysis of the SiC MOSFET industry, examining the performance of key players in the market. The analysis includes five significant SiC MOSFETs:

- Wolfspeed (C3M0075120D)

- ROHM (SCT3080KLHR)

- Infineon (AIMW120R080M1)

- STMicroelectronics (SCTW40N120G2VAG)

- Anbonsemi (AS1M080120P)

Pivotal Role in Electrification

Among these, the 1200V SiC MOSFET stands out as a crucial enabler for the transition of Battery Electric Vehicles (BEVs) to 800V systems. SiC MOSFETs are rapidly transforming power electronics with their exceptional efficiency, thermal performance, and capability to handle high voltages. This makes them ideal for various applications, including automotive, industrial, and renewable energy systems.

Future Outlook

As the demand for high-performance power devices continues to escalate, innovations in SiC technology will likely play a key role in the evolution of power electronics. The robust growth in the SiC market indicates not only a shift towards more efficient energy solutions but also highlights the technology's critical role in supporting global electrification trends.