IHG25N50E-GE3
Payment:
Delivery:

SIHG25N50E-GE3 , Vishay / Siliconix

メーカー: Vishay / Siliconix
製造元部品番号: SIHG25N50E-GE3
パッケージ: TO-247AC-3
RoHS:
データシート:

PDF For SIHG25N50E-GE3

ECAD:
説明:
MOSFET 500V Vds 30V Vgs TO-247AC
見積依頼 In Stock: 438938
暖かいヒント:以下のフォームに記入してください。できるだけ早くご連絡いたします。
*数量:
*名前:
*メールアドレス:
電話:
目標価格:
メッセージ:
お問い合わせを送信
  • Product Details
  • Shopping Guide
  • FAQs
製品の技術仕様
Product Attribute Attribute Value
Manufacturer Vishay
Product Category MOSFET
RoHS
Rds On - Drain-Source Resistance 145 mOhms
Rise Time 36 ns
Fall Time 29 ns
Mounting Style Through Hole
Pd - Power Dissipation 250 W
Product Type MOSFET
Number Of Channels 1 Channel
Package / Case TO-247AC-3
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Channel Mode Enhancement
Series E
Packaging Tube
Brand Vishay / Siliconix
Configuration Single
Transistor Polarity N-Channel
Vgs - Gate-Source Voltage 30 V
Vgs Th - Gate-Source Threshold Voltage 4 V
Qg - Gate Charge 57 nC
Technology Si
Id - Continuous Drain Current 26 A
Vds - Drain-Source Breakdown Voltage 500 V
Typical Turn-Off Delay Time 57 ns
Typical Turn-On Delay Time 19 ns
Factory Pack Quantity 500
Subcategory MOSFETs
クロスリファレンス
814949
1148
/category/Semiconductors/Discrete-Semiconductors/Transistors/MOSFET_1148?proid=814949&N=
$