DB28N30TM
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FDB28N30TM , ON Semiconductor / Fairchild

メーカー: ON Semiconductor / Fairchild
製造元部品番号: FDB28N30TM
パッケージ: TO-263-3
RoHS:
データシート:

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説明:
MOSFET 300V N-Channel
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製品の技術仕様
Product Attribute Attribute Value
Manufacturer ON Semiconductor
Product Category MOSFET
RoHS
Rds On - Drain-Source Resistance 108 mOhms
Rise Time 135 ns
Fall Time 69 ns
Mounting Style SMD/SMT
Pd - Power Dissipation 250 W
Product Type MOSFET
Number Of Channels 1 Channel
Package / Case TO-263-3
Length 10.67 mm
Width 9.65 mm
Height 4.83 mm
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Channel Mode Enhancement
Series FDB28N30TM
Packaging Cut Tape or Reel
Brand ON Semiconductor / Fairchild
Configuration Single
Transistor Polarity N-Channel
Transistor Type 1 N-Channel
Vgs - Gate-Source Voltage 30 V
Technology Si
Id - Continuous Drain Current 28 A
Vds - Drain-Source Breakdown Voltage 300 V
Typical Turn-Off Delay Time 79 ns
Typical Turn-On Delay Time 35 ns
Factory Pack Quantity 800
Subcategory MOSFETs
Unit Weight 0.046296 oz
Tradename UniFET
クロスリファレンス
764866
1148
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