SemiQ is set to showcase its cutting-edge 1.2kV SOT-227 silicon carbide MOSFET power modules at the highly anticipated Applied Power Electronics Conference (APEC) toward the end of February. These innovative modules are designed to offer exceptional performance with or without a co-packaged Schottky diode, catering to a wide range of industry needs. With current ratings ranging from 30 to 113A and on-resistance spanning from 80mΩ to 20mΩ, these modules are a testament to SemiQ's commitment to versatility and efficiency.
The SOT-227 package's design features the ability to be securely bolted to a heatsink, enhancing heat dissipation, and ensuring optimal performance under demanding conditions. Additionally, the modules are equipped with convenient screw terminals for seamless electrical connections, simplifying installation and maintenance processes.
SemiQ prides itself on the rigorous testing and quality assurance processes integrated into the production of these modules. Each module undergoes wafer-level gate burn-in testing to ensure the highest quality gate oxide with stable gate threshold voltage. Furthermore, additional tests, including gate stress, high-temperature reverse bias drain stress, and H3TRB (high humidity, voltage, and temperature) tests, further affirm the industrial-grade quality and reliability of the modules.
Taking the 1.2kV 18mΩ 113A GCMS020B120S1-E1 MOSFET plus Schottky as a prime example, the accompanying diode boasts a continuous handling capacity of up to 106A, while the MOSFET can be pulsed up to an impressive 250A. These capabilities enable the module to effectively manage up to 395W at 25°C, with the junction specified to operate reliably across a wide temperature range from -55 to +175°C.
The recommended gate drive ranges from -5 to +20V, with maximums of -10V and +25V, ensuring flexibility and compatibility with various system requirements. With an input capacitance of 5.3nF, the modules offer efficient and responsive performance in diverse applications.
SemiQ's participation in APEC presents an exciting opportunity for industry professionals to witness firsthand the advancements in silicon carbide MOSFET power modules and explore the potential for transformative impact across multiple sectors.
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