Infineon, a leading semiconductor company, has recently unveiled a groundbreaking development in power transistors with the introduction of bi-directional GaN transistors at 40, 650, and 850 volts, along with a current sensing GaN transistor.
The newly launched bi-directional transistors come in two variants: the 650V and 850V models are both designed as normally-off monolithic gate-injection transistors. These innovative devices feature four operational modes enabled by two separate gates and a substrate terminal. Infineon terms this capability as 'independent isolated control', promising enhanced functionality and versatility.
The star of the lineup, the IGK080B041S, is a 40V normally-off monolithic Schottky gate transistor engineered for blocking voltages in both directions. This transistor is specifically optimized to replace conventional back-to-back silicon MOSFETs in battery disconnection switches commonly found in consumer products.
- Structure: Three-terminal device with one gate and two drains, offering symmetry - On-resistance: Typical value of 6mΩ (with 4mΩ and 9mΩ variants in development) - Voltage and current ratings: Maximum pulses of 48V and 70A drain-to-drain (14A continuous)
- Gate compatibility: Up to +5.5V with respect to the least positive drain
- Gate charge: Total of 5.5nC with 20V voltage across the drains and 10A current flow
Infineon's innovative bi-directional GaN transistors showcase a leap forward in power management technology, promising improved efficiency and reliability across various applications.
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