製品の技術仕様
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | Vishay |
| Product Category | MOSFET |
| RoHS |
|
| Rds On - Drain-Source Resistance | 25.9 mOhms |
| Rise Time | 3 ns |
| Fall Time | 6 ns |
| Mounting Style | SMD/SMT |
| Pd - Power Dissipation | 45 W |
| Product Type | MOSFET |
| Number Of Channels | 1 Channel |
| Package / Case | PowerPAK-SO-8L-4 |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 175 C |
| Channel Mode | Enhancement |
| Qualification | AEC-Q101 |
| Series | SQ |
| Packaging | Cut Tape or Reel |
| Brand | Vishay / Siliconix |
| Configuration | Single |
| Transistor Polarity | N-Channel |
| Vgs - Gate-Source Voltage | 20 V |
| Vgs Th - Gate-Source Threshold Voltage | 3 V |
| Qg - Gate Charge | 7.6 nC |
| Technology | Si |
| Id - Continuous Drain Current | 15 A |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Typical Turn-Off Delay Time | 15 ns |
| Typical Turn-On Delay Time | 9 ns |
| Factory Pack Quantity | 3000 |
| Subcategory | MOSFETs |
