I2304DDS-T1-GE3
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I2304DDS-T1-GE3 , Vishay / Siliconix

メーカー: Vishay / Siliconix
製造元部品番号: SI2304DDS-T1-GE3
パッケージ: SOT-23-3
RoHS:
データシート:

PDF For SI2304DDS-T1-GE3

ECAD:
説明:
MOSFET 30V Vds 20V Vgs SOT-23
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  • 数量 単価
  • 5+ $0.08919
  • 50+ $0.07281
  • 150+ $0.06462
  • 500+ $0.05850
  • 3000+ $0.04761
  • 6000+ $0.04518

In Stock: 10340

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数量 最小 5
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$0.44595

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製品の技術仕様
Product Attribute Attribute Value
Manufacturer Vishay
Product Category MOSFET
RoHS
Forward Transconductance - Min 11 S
Rds On - Drain-Source Resistance 60 mOhms
Rise Time 12 ns
Fall Time 5 ns
Mounting Style SMD/SMT
Pd - Power Dissipation 1.7 W
Product Type MOSFET
Number Of Channels 1 Channel
Package / Case SOT-23-3
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Channel Mode Enhancement
Series SI2
Packaging Cut Tape or Reel
Part # Aliases SI2304DDS-GE3
Brand Vishay / Siliconix
Configuration Single
Transistor Polarity N-Channel
Transistor Type 1 N-Channel
Vgs - Gate-Source Voltage 10 V
Vgs Th - Gate-Source Threshold Voltage 1.2 V
Qg - Gate Charge 6.7 nC
Technology Si
Id - Continuous Drain Current 3.6 A
Vds - Drain-Source Breakdown Voltage 30 V
Typical Turn-Off Delay Time 10 ns
Typical Turn-On Delay Time 5 ns
Factory Pack Quantity 3000
Subcategory MOSFETs
Unit Weight 0.000282 oz
Tradename TrenchFET
クロスリファレンス
739881
1148
/category/Semiconductors/Discrete-Semiconductors/Transistors/MOSFET_1148?proid=739881&N=
$
5 0.08919
50 0.07281
150 0.06462
500 0.05850
3000 0.04761
6000 0.04518